An improved fabrication technique for porous silicon
- 1 February 1993
- journal article
- research article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 64 (2) , 507-509
- https://doi.org/10.1063/1.1144223
Abstract
An improved technique for fabrication of porous silicon is described. Silicon wafers of any size and shape can be anodized with this very versatile apparatus. Also, this technique is shown to be safer due to reduced HF acid handling. Overall, this equipment allows more efficient fabrication of uniform and good quality porous silicon safely on silicon wafers of variable sizes and shapes.Keywords
This publication has 11 references indexed in Scilit:
- Photoluminescence studies on porous siliconApplied Physics Letters, 1992
- Current-induced light emission from a porous silicon deviceIEEE Electron Device Letters, 1991
- Evidence for quantum confinement in the photoluminescence of porous Si and SiGeApplied Physics Letters, 1991
- Efficient Visible Photoluminescence from Porous SiliconJapanese Journal of Applied Physics, 1991
- Porous silicon formation: A quantum wire effectApplied Physics Letters, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Porous silicon: The material and its applications to SOI technologiesMicroelectronic Engineering, 1988
- Porous silicon layers and its oxide for the silicon-on-insulator structureJournal of Applied Physics, 1986
- Electropolishing Silicon in Hydrofluoric Acid SolutionsJournal of the Electrochemical Society, 1958
- Electrolytic Shaping of Germanium and SiliconBell System Technical Journal, 1956