Effects of low-frequency modulation on rf discharge chemical vapor deposition
- 3 October 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (14) , 1263-1265
- https://doi.org/10.1063/1.100445
Abstract
Low‐frequency square‐wave modulation of a rf discharge in silane diluted with a rare gas brought about an improvement in the deposition rate of amorphous hydrogenated silicon films and in the film quality as well as a drastic suppression of powder concentration in the discharge space. These results can be explained by a SiH3 density in the modulated discharge that is high compared to that without modulation, because of the electron density enhancement resulting from the modulation and also because the lifetime of SiH3 radicals is much longer than those of SiHn radicals (n=0–2).Keywords
This publication has 3 references indexed in Scilit:
- Investigation of the growth kinetics of glow-discharge hydrogenated amorphous silicon using a radical separation techniqueJournal of Applied Physics, 1986
- Enhancement of the plasma density and deposition rate in rf dischargesApplied Physics Letters, 1986
- Effects of inert gas dilution of silane on plasma-deposited a-Si:H filmsApplied Physics Letters, 1981