Optical Properties of Strain-Balanced Si0.73Ge0.27Planar Microcavities on Si Substrates
- 30 April 2002
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 41 (Part 1, No) , 2664-2667
- https://doi.org/10.1143/jjap.41.2664
Abstract
To realize of Si-based optical devices, SiGe/Si distributed Bragg reflectors (DBRs) with strain-balanced structures were grown on relaxed SiGe virtual substrates, and SiGe microcavities with high qualities were fabricated. Strain balance of the SiGe/Si DBRs was confirmed by X-ray diffraction measurements and Raman spectroscopy, and a record reflectivity of 90% was achieved in a 38.5-pair sample. Spectral changes of photoluminescence due to the microcavity were observed as the excitation power was increased. Moreover, SiGe microcavities with top Si/CaF2 DBRs showed a drastic intensity enhancement and a significant narrowing of spectral width was observed.Keywords
This publication has 0 references indexed in Scilit: