Transistor input parameter variations indicating high-gain frequency multiplication properties

1 January 1972

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 60 (2) , 244-245
https://doi.org/10.1109/PROC.1972.8613

Abstract

Transistors exhibiting abrupt input parameter variations with input voltage often yield enhanced frequency multiplication properties. The parameters that can be measured and utilized as high-gain frequency multiplication indicators are discussed.

Keywords

FREQUENCY CONVERSION
VOLTAGE
ELECTRODES
LENSES
CAPACITANCE
FREQUENCY MEASUREMENT
RADIO FREQUENCY
CAPACITANCE-VOLTAGE CHARACTERISTICS
CATHODES
ATOMIC MEASUREMENTS

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