Two-dimensional analysis of lateral-base transistors

6 May 1971

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 7 (9) , 226-227
https://doi.org/10.1049/el:19710153

Abstract

Numerical methods are used to show that when p-n-p lateral-base transistors are analysed, the emitter efficiency must be considered. A comparison is made between two such transistors, one with a buried n layer, and the other without.

Keywords

TWO DIMENSIONAL ANALYSIS
P-N-P
BIPOLAR TRANSISTORS
LATERAL BASE TRANSISTORS