Ultrahigh Be doping of Ga0.47In0.53As by low-temperature molecular beam epitaxy
- 19 June 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (25) , 2586-2588
- https://doi.org/10.1063/1.101057
Abstract
Layers of Ga0.47In0.53As grown on InP by a beam epitaxy method have been doped with Be to p=5×1020 cm−3 by growth at substrate temperatures as low as 365 °C. The maximum doping level is strongly growth temperature dependent. Heterostructure bipolar transistors with base doping p=1×1020 cm−3, current gain β=54, and unity current gain cutoff frequency fT=140 GHz are illustrated.Keywords
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