Study of the correlation between GaN material properties and the growth conditions of radio frequency plasma-assisted molecular beam epitaxy
- 1 March 2001
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 80 (1-3) , 304-308
- https://doi.org/10.1016/s0921-5107(00)00646-2
Abstract
No abstract availableKeywords
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