Organic Thin-Film Transistors Fabricated on Plastic Substrates with a Polymeric Gate Dielectrics
- 15 May 2003
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 42 (Part 2, No) , L523-L525
- https://doi.org/10.1143/jjap.42.l523
Abstract
An organic thin-film transistor using pentacene as an active layer was fabricated on plastic substrate. An organic layer such as thermal curable polymer (JSS-362, Japan Synthetic Rubber (JSR)) was used as the gate dielectrics. The JSS-362 may act not only as a dielectric layer but also as a surface smoothing layer. From the electrical measurement, typical ID-VD characteristics of the field-effect transistor (FET) were observed. The field effect mobility µ was calculated to be 0.12 cm2V-1s-1, while the threshold voltage VT was approximately -15 V. The on/off ratio was above 104 when VG was scanned from -75 V to +0 V.Keywords
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