1/f noise in Hall effect: Fluctuations in mobility
- 1 June 1980
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (6) , 3438
- https://doi.org/10.1063/1.328029
Abstract
From theoretical and experimental investigations on 1/f noise in the Hall voltage at high magnetic induction it is concluded that 1/f noise is caused by mobility fluctuations.This publication has 3 references indexed in Scilit:
- Lattice scattering causes 1/ƒ noisePhysics Letters A, 1978
- Hall-effect noise in semiconductorsJournal of Applied Physics, 1977
- 1/f noise in thermo EMF of intrinsic and extrinsic semiconductorsPhysica, 1974