Measurement of barrier heights in high permittivity gate dielectric films
- 15 April 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (15) , 2749-2751
- https://doi.org/10.1063/1.1468915
Abstract
Based on theoretical studies of tunneling current phenomenon, a method for measuring barrier heights in metal–oxide–semiconductor structures is illustrated. Using this method, barrier heights associated with the gate dielectric films are investigated. Also, the main conduction mechanism in gate dielectric films is identified to be tunneling.
Keywords
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