Geometric structure of the Si(111): As-1 × 1 surface
- 15 January 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 37 (2) , 1051-1054
- https://doi.org/10.1103/physrevb.37.1051
Abstract
Medium-energy ion scattering has been used to study the structure of the Si(111):As-1 × 1 surface. The results are consistent with a surface model containing threefold-coordinated arsenic atoms in a substitutional first-layer site. A comparison of channeling and blocking data with Monte Carlo simulations shows an 0.24-Å expansion of the arsenic layer from unrelaxed bulk terminated silicon positions (30% of the bulk terminated first-to-second-layer spacing) and an arsenic one-dimensional vibration amplitude of 0.14 Å.Keywords
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