Structural analysis of an epitaxial layer of CdTe on GaAs by the multidirectional channeling technique
- 1 January 1990
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 45 (1-4) , 455-458
- https://doi.org/10.1016/0168-583x(90)90874-t
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Structure and polarity of {111} CdTe on {100} GaAsJournal of Applied Physics, 1989
- Strain measurement of epitaxial CaF2 on Si (111) by MeV ion channelingApplied Physics Letters, 1985
- Channeling analysis of disorder structure in neon implanted siliconNuclear Instruments and Methods, 1978