Acceptorlike excited states of the isoelectronic,,exciton system in silicon
- 15 September 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 26 (6) , 3502-3505
- https://doi.org/10.1103/physrevb.26.3502
Abstract
Excitation spectroscopy of the isoelectronic , , exciton system in silicon yields seven new excited states. They can be associated with excited hole states of an effective-mass-like pseudoacceptor split in the axially symmetric field of the binding center. The pseudoacceptor ( meV) fits excellently into the systematics of common acceptor spectra in silicon.
Keywords
This publication has 15 references indexed in Scilit:
- CW laser operation with new F+2-type color centers in NaFIEEE Journal of Quantum Electronics, 1982
- Isoelectronic bound excitons in silicon: The role of deep acceptorsPhysical Review B, 1981
- Excitation spectroscopy on the P, Q, R isoelectronic lines in indium doped siliconSolid State Communications, 1981
- Enhancement of long lifetime lines in photoluminescence from Si:InSolid State Communications, 1981
- Localized exciton bound to an isoelectronic trap in siliconPhysical Review B, 1980
- Observation of long lifetime lines in photoluminescence from Si: InSolid State Communications, 1979
- Excitons bound to an isoelectronic trap in siliconJournal of Luminescence, 1979
- Acceptorlike ExcitedStates of Excitons Bound to Nitrogen Pairs in GaPPhysical Review Letters, 1975
- Exciton Energy Transfer in GaP: NPhysical Review Letters, 1975
- Stress Effects on Excitons Bound to Axially Symmetric Defects in SemiconductorsPhysical Review B, 1970