Enhancement of deep acceptor activation in semiconductors by superlattice doping
- 9 December 1996
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (24) , 3737-3739
- https://doi.org/10.1063/1.117206
Abstract
The thermal activation of acceptors in wide‐gap semiconductors can be very low due to large acceptor activation energies. It is shown that superlattice doping, i.e., the composition modulation of a uniformly doped ternary semiconductor, can enhance the acceptor activation by more than one order of magnitude.Keywords
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