Resonant Raman scattering in GaAlAs : First order active and disorder activated phonon lines. Theory of the IR dielectric susceptibility.
- 31 March 1983
- journal article
- Published by Elsevier in Physica B+C
- Vol. 117-118, 365-367
- https://doi.org/10.1016/0378-4363(83)90530-2
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Raman investigation of anharmonicity and disorder-induced effects inepitaxial layersPhysical Review B, 1981