1W CW, 672 nm visible laser diodes

21 November 1991

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 27 (24) , 2245-2246
https://doi.org/10.1049/el:19911389

Abstract

Visible laser diodes emitting at 672 nm and employing a GaInP strained-layer, single quantum well, graded-index separate confinement heterostructure (GRINSCH) design have been fabricated. CW output power in excess of 1 W and CW threshold current density as low as 305 A/cm² were obtained from a coated, 60 μm wide oxide stripe diode operating at 10°C.

Keywords

SEPARATE CONFINEMENT HETEROSTRUCTURE
VISIBLE LASER DIODES
SQW
SINGLE QUANTUM WELL
10 DEGC
STRAINED-LAYER
1 W
672 NM
GRADED-INDEX
CW THRESHOLD CURRENT DENSITY
GRINSCH
CW OUTPUT POWER
SEMICONDUCTOR LASERS
GAINP

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