A New Process for Depositing Tungsten Nitride Thin Films
- 1 February 1998
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 145 (2) , L21-L23
- https://doi.org/10.1149/1.1838267
Abstract
A new process for depositing tungsten nitride (WNx) thin films is reported. It is based on plasma‐enhanced chemical vapor deposition (PECVD) using chemistry. High purity films that are stable in air have been obtained using the PECVD process. Effects of process conditions on conformality, film purity, and morphology are examined.Keywords
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