The variation of resistivity with temperature for n-type degenerate indium antimonide films
- 1 July 1977
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 44 (1) , 21-28
- https://doi.org/10.1016/0040-6090(77)90024-4
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Barrier-limited mobility in thin semiconductor filmsThin Solid Films, 1973
- Carrier mobility and field effect in thin indium antimode filmsThin Solid Films, 1972
- Über die Ultrarotabsorption freier Ladungsträger bei nichtparabolischer Bandstruktur am Beispiel InSbZeitschrift für Naturforschung A, 1961
- Eigenschaften aufgedampfter InSb- und InAs-SchichtenZeitschrift für Naturforschung A, 1961
- Determination of Optical Constants and Carrier Effective Mass of SemiconductorsPhysical Review B, 1957
- Impurity Band Conduction in Germanium and SiliconPhysical Review B, 1956