High-quality sub-5-nm oxynitride dielectric films grown on silicon in a nitric oxide ambient using rapid thermal processing
- 9 September 1994
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 2335, 265-271
- https://doi.org/10.1117/12.186065
Abstract
Ultrathin (< 5 nm) dielectric films have been grown on (100) silicon using rapid thermal processing (RTP) in a nitric oxide (NO) ambient. The chemical composition was studied using x-ray photoelectron spectroscopy (XPS). Interface state density, charge trapping properties, and interface state generation during Fowler-Nordheim electron injection have also been investigated. The films grown in NO have excellent electrical properties. These properties are explained in terms of much stronger and large numbers of Si-N bonds in both the bulk of the dielectric films an in Si-SiO2 interface region.Keywords
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