Guided-wave GaAs/AlGaAs FET optical modulator based on free-carrier-induced bleaching
- 19 November 1987
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 23 (24) , 1302-1304
- https://doi.org/10.1049/el:19870901
Abstract
The first optical modulators based on the free-carrier bleaching effect have been demonstrated. In these singlequantum-wen FET optical modulator (FETOM) devices, the FET gate is self-aligned to a waveguide. They exhibit a 3 : 1 extinction ratio for a 10 V change in applied voltage to the gate electrode of a 750 μm FETOM waveguide.Keywords
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