Quantum 1/F Noise in Solid State Double Devices, in Particular Hg(1-x) CdxTe Diodes.

Abstract
It is shown how one can discriminate between two modes of diffusion 1/f noise fluctuations in p-n diodes; (a) all minority carriers contribute to the noise; (b) only the excess minority carriers contribute to the noise. n+-p Hg1-xCdxTe diodes seem to follow case (a) at back bias. For forward biased diodes S sub I(f)/I-sq is independent of bias, as expected for surface recombination in the p-region. P+-i-n Si diodes seem to follow case (b) at first sight, but this would be an erroneous conclusion, since in these diodes the noise is caused by recombination in the space charge region. The experiments give Si(f)/(abs. vol. I) = constant, as expected for recombination 1/f noise. In Hg1-xCdxTe the carrier lifetime has not yet been established, and hence the alpha sub H/tau data cannot be used to evaluate alpha sub H. It seems reasonable, however, that for x = 0.30 the estimated value of alpha sub H lies between the coherent state value .0046 and the incoherent state value .00005 depending on the value of tau. More accurate determination of tau (both theoretical and experimental) are being planned.

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