X-ray diffraction evidence for transient composition effects in MOVPE multilayer growth for Ga1−x Al x As alloys
- 1 June 1987
- journal article
- Published by International Union of Crystallography (IUCr) in Journal of Applied Crystallography
- Vol. 20 (3) , 230-234
- https://doi.org/10.1107/s0021889887086795
Abstract
X-ray rocking-curve analysis is applied to the detection of artifacts in multilayer epitactic growth of III–V ternary compounds by metal–organic vapour-phase epitaxy (MOVPE). Transient spikes in the composition result in unwanted additional thin layers whose presence disturbs the interference pattern expected from the designed heterostructures, thus modifying the oscillating part of the reflection profile. X-ray methods and secondary-ion mass spectroscopy (SIMS) lead to descriptions of the actual layer stacking in good agreement with each other.Keywords
This publication has 0 references indexed in Scilit: