n-CdS/n-GaAs voltage-enhanced photoanode
- 1 October 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (7) , 446-447
- https://doi.org/10.1063/1.89735
Abstract
We report an n‐CdS photoanode grown on an n‐GaAs substrate. The photovoltage at the n‐GaAs/n‐CdS junction in series with the CdS/electrolyte junction increases the solar‐cell efficiency by a factor of about 1.5 relative to a simple n‐CdS photoelectrochemical solar cell.Keywords
This publication has 8 references indexed in Scilit:
- Spectral Response and Efficiency Relations in Semiconductor Liquid Junction Solar CellsJournal of the Electrochemical Society, 1977
- Optical to electrical energy conversion. Characterization of cadmium sulfide and cadmium selenide based photoelectrochemical cellsJournal of the American Chemical Society, 1976
- Visible light to electrical energy conversion. Stable cadmium sulfide and cadmium selenide photoelectrodes in aqueous electrolytesJournal of the American Chemical Society, 1976
- Electrical and Photovoltaic Properties of CdS–GaAs JunctionsJapanese Journal of Applied Physics, 1975
- p−InP/n−CdS solar cells and photovoltaic detectorsApplied Physics Letters, 1975
- Electrochemical photo and solar cells principles and some experimentsJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1975
- Quantum Dielectric Theory of Electronegativity in Covalent Systems. II. Ionization Potentials and Interband Transition EnergiesPhysical Review B, 1969
- Photoelectric Properties of Cleaved GaAs, GaSb, InAs, and InSb Surfaces; Comparison with Si and GePhysical Review B, 1965