Shubnikov—de Haas Effect in Bismuth. II
- 15 April 1963
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 130 (2) , 605-610
- https://doi.org/10.1103/physrev.130.605
Abstract
We have measured the oscillatory component of the transverse magnetoresistance of bismuth as a function of magnetic field orientation at 1.2°K. We have observed spin splitting of the first few Landau levels for magnetic field along both the binary and bisectrix axes. The Shubnikov—de Haas periods indicate a marked deviation of the light-electron Fermi surface from ellipsoidal form, for magnetic field orientations near the binary axis; we compare our results with the Cohen nonellipsoidal model. We observe the light-hole Fermi surface throughout the range of orientation. By comparison with earlier results, we establish that the previously observed heavy carriers are electrons. We observe a new fourth set of periods, which we attribute to a heavy-hole Fermi surface of trefolioid form; the square of the mean Fermi momentum is millielectron volts.
Keywords
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