Electrical properties of Hg3Te3-In2Te3alloys

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Abstract
Further studies have been made of single-crystal specimens of alloys of Hg3Te3 with In2Te3. Samples were annealed in Hg until extrinsic n-type properties were obtained between 77 and 250°K, and until the electron mobility was almost independent of temperature in that range. From 0-15% In2Te3 the electron mobility at 100°K was between 5000 and 20 000 cm2 v−1 s−1. However, from 375 to 75% it was less than 500 cm2 v−1 s−1. Evidence was obtained at several compositions that in this state the scattering parameter s was near zero, and the density of states effective mass was calculated on this assumption from the Hall and Seebeck coefficients. For the 0-15% alloys me/m0 was 003 at a carrier density of 3 × 1018 electrons/cm3; for 375-75% alloys me/m0 was 006 at 1017 electrons/cm3.

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