Polysilicon Etchback Plasma Process Using HBr , Cl2, and SF 6 Gas Mixtures for Deep‐Trench Isolation
- 1 February 1992
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 139 (2) , 575-579
- https://doi.org/10.1149/1.2069260
Abstract
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