Surface processes of selective growth by atomic layer epitaxy
- 1 December 1994
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 82-83, 57-63
- https://doi.org/10.1016/0169-4332(94)90195-3
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- Reduction of carbon impurity in GaAs by photo-irradiation in atomic layer epitaxyApplied Surface Science, 1994
- In situ optical characterization of GaAs surfaces under alternating supply of GaCl and AsH3Applied Physics Letters, 1992
- Pyrolysis of Trimethylgallium on (001) GaAs Surface Investigated by Surface Photo-AbsorptionJapanese Journal of Applied Physics, 1991
- Atomic layer epitaxy of AlAs and AlGaAsJournal of Crystal Growth, 1990
- Facet growth of AlGaAs on GaAs with SiO2 gratings by MOCVD and applications to quantum well wiresJournal of Crystal Growth, 1989
- Monolayer growth and direct writing of GaAs by pulsed laser metalorganic vapor phase epitaxyThin Solid Films, 1988
- Recent progress in atomic layer epitaxy of III–V compoundsJournal of Crystal Growth, 1988
- Atomic-layer growth of GaAs by modulated-continuous-wave laser metal-organic vapor-phase epitaxyJournal of Vacuum Science & Technology B, 1987
- Flow-Rate Modulation Epitaxy of GaAsJapanese Journal of Applied Physics, 1985
- Molecular Layer EpitaxyJournal of the Electrochemical Society, 1985