Auger Electron Spectroscopy of Contaminated Gallium-Arsenide Surfaces

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Abstract
Auger electron spectroscopy was used to identify contaminants on GaAs–Cs–O photosurfaces. Calibration on graphite allowed a quantitative measure of the amount of surfacecarbon contamination present. The smallest quantity of carbon observed corresponded to less than 2% of a monolayer. A linear relation between the amount of surfacecarbon and the yield of the subsequently prepared GaAs–Cs–O photocathode was established. It appears that approximately one monolayer of carbon is sufficient to reduce the photoyield to zero. It was also observed that certain surface treatments cause a change in the ratio of gallium to arsenic at the surface.

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