Electron relaxation in quantum dots by means of Auger processes
- 15 December 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 46 (23) , 15574-15577
- https://doi.org/10.1103/physrevb.46.15574
Abstract
The present theoretical work deals with the relaxation of hot electrons in quantum dots by Coulomb scattering with an electron-hole plasma. A random-phase approximation is used which includes single-particle and collective-plasma excitations. We discuss the influence of the dot size, plasma density, and temperature. The resulting transition rates are of the order of for a plasma density of in As/InP. In the presence of a dense electron-hole plasma, hot electrons can relax efficiently by Auger processes, even in small semiconductor quantum dots where the relaxation by phonon scattering is weak.
Keywords
This publication has 18 references indexed in Scilit:
- Intrinsic mechanism for the poor luminescence properties of quantum-box systemsPhysical Review B, 1991
- Applications of Quantum Semiconductor StructuresPublished by Elsevier ,1991
- Phonon scattering and energy relaxation in two-, one-, and zero-dimensional electron gasesPhysical Review B, 1990
- Nonradiative damage measured by cathodoluminescence in etched multiple quantum well GaAs/AlGaAs quantum dotsJournal of Vacuum Science & Technology B, 1989
- Band-mixing effects and excitonic optical properties in GaAs quantum wire structures-comparison with the quantum wellsIEEE Journal of Quantum Electronics, 1988
- Excitons in quantum boxes: Correlation effects and quantum confinementPhysical Review B, 1988
- Theory of the linear and nonlinear optical properties of semiconductor microcrystallitesPhysical Review B, 1987
- Quantum well lasers--Gain, spectra, dynamicsIEEE Journal of Quantum Electronics, 1986
- Lifetime of a quasiparticle in a two-dimensional electron gasPhysical Review B, 1982
- Multidimensional quantum well laser and temperature dependence of its threshold currentApplied Physics Letters, 1982