Single-interface enhanced mobility structures by metalorganic chemical vapour deposition
- 20 August 1981
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 17 (17) , 606-608
- https://doi.org/10.1049/el:19810426
Abstract
Enhanced mobility effects in single-interface 2-dimensional electron gas heterostructures grown by metalorganic chemical vapour deposition (MOCVD) are reported. The mobility/temperature characteristics of single-interface structures, with and without an undoped spacer to reduce coulomb scattering at the interface, are described.Keywords
This publication has 1 reference indexed in Scilit:
- Chapter 1 Low-Field Electron TransportPublished by Elsevier ,1975