Structurally Induced Semimetal-to-Semiconductor Transition in-Ti
- 24 April 1978
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 40 (17) , 1155-1158
- https://doi.org/10.1103/physrevlett.40.1155
Abstract
We show that observed changes in the nature of the conducting state of -Ti in going from the normal semimetallic state to the charge-density-wave semiconducting state can be successfully modeled by variation of a single structural parameter, , which modulates the Ti-Se bond length. These ab initio band-structure results lead to a number of interesting experimental consequences.
Keywords
This publication has 15 references indexed in Scilit:
- Modelling the contrasting semimetallic characters of TiS2 and TiSe2Physica Status Solidi (b), 1978
- Band structure and lattice instability of TiPhysical Review B, 1978
- Ti: Semiconductor, semimetal, or excitonic insulatorPhysical Review B, 1978
- Semimetallic character of TiSe2and semiconductor character of TiS2under pressureJournal of Physics C: Solid State Physics, 1977
- Raman and infrared studies of superlattice formation in TiPhysical Review B, 1977
- Self-consistent numerical-basis-set linear-combination-of-atomic-orbitals investigation of the electronic structure and properties of TiPhysical Review B, 1977
- Electronic properties and superlattice formation in the semimetalPhysical Review B, 1976
- Superlattice formation in titanium diselenidePhysical Review B, 1976
- Optical and electrical studies of Ti- and Ta-dichalcogenides: PlasmonsPhilosophical Magazine, 1976
- The self-consistent electronic spectrum of the layer crystal TiS2Journal of Physics C: Solid State Physics, 1975