Boron diffusion upon annealing of laser thermal processed silicon
- 10 July 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Transient enhanced diffusion after laser thermal processing of ion implanted siliconApplied Physics Letters, 1999
- Resistless, area-selective ultrashallow P+/N junction fabrication using projection gas immersion laser dopingApplied Physics Letters, 1996