Industrial production of GaN and InGaN-light emitting diodes on SiC-substrates
- 1 September 2001
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 230 (3-4) , 497-502
- https://doi.org/10.1016/s0022-0248(01)01304-5
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- GaN-Based LEDs and Lasers on SiCPhysica Status Solidi (a), 2000
- Origin of defect-related photoluminescence bands in doped and nominally undoped GaNPhysical Review B, 1999
- Comparison of Ni/Au, Pd/Au, and Cr/Au Metallizations for Ohmic Contacts to p-GaNMRS Proceedings, 1996
- Quasiparticle band structures of short-period superlattices and ordered alloys of AlN and GaNPhysical Review B, 1994
- The effects of contact size and non-zero metal resistance on the determination of specific contact resistanceSolid-State Electronics, 1982