Generalized Modeling of GaAs Mesfets and Modfets Based on Highly Accurate Broadband Measurements

1 October 1989

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 179-186
https://doi.org/10.1109/euma.1989.334153

Abstract

A recently defined THLR method for vector network analyzer calibration is used to extract the error-parameters of coax to microstrip transitions with an accuracy hitherto unattained. The scattering coefficients of GaAs FETs such as MESFETs and MODFETs, installed in hybrid technology, are measured and error-corrected up to 40 GHz. A new parameter extraction method is discussed to get reliable bias-dependent model parameters. These are represented in 3D graphs covering the gate-forward, pinch-off, saturation, and non-saturation region as well. Thus analogue and digital operations can be described.

Keywords

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