Heavy-Ion Induced Single Event Upsets in a Bipolar Logic Device
- 1 January 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 30 (6) , 4470-4474
- https://doi.org/10.1109/tns.1983.4333156
Abstract
We present heavy ion test results for a bipolar logic device of moderate complexity. Such devices require the implementation of special techniques for testing circuits of varying upset sensitivity, and unlike similar MOS devices, present problems with test data interpretation.Keywords
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