Photoablation: Schottky barriers on patterned Si surfaces
- 1 January 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 77 (1) , 367-370
- https://doi.org/10.1063/1.359331
Abstract
Easy to make, patterned, Schottky barriers are investigated. In particular, the following aspects have been considered: the patterning technique, the electrical barrier height, and potential usage as solar cells. Patterning of the Si surfaces was achieved by photoablation process using an UV excimer laser in a presence of various solutions. Using a 5 mW red HeNe laser launched at various angles on the Si surface we have found that patterned solar cells ablated with 2:3:100 of HF:HNO3:H2O were as much as 23% more efficient than nonpatterned cells.This publication has 10 references indexed in Scilit:
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