Experimental evidence for room-temperature intermetallic compound formation at the Pd/Al interface
- 15 January 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 39 (3) , 1564-1568
- https://doi.org/10.1103/physrevb.39.1564
Abstract
The growth of Pd films on Al and Pd/Al interface formation were studied with use of ultraviolet photoemission spectroscopy (UPS) and low-energy ion scattering. At room temperature, the deposited Pd intermixes with the Al substrate and forms a thin surface alloy about 5 monolayers (ML) thick. Bulklike Pd states start to build up at when the Pd coverage exceeds 4 ML. More than 8 ML of Pd are needed to completely cover the Al substrate and to fully develop the Pd metallic valence band. A Pd4d–derived band centered at 4 eV below was observed both for monolayer Pd coverage on Al and for thick Al on Pd. It is argued that this deep-lying d band is due to the interaction between Pd and Al through the hybridization of the Pd d and Al s states.
Keywords
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