Open tube diffusion of Zn into AlGaAs and GaAs

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Abstract
A new method of open tube zinc diffusion into AlGaAs and GaAs using a confined chamber has been developed. The depth and quality of Zn diffusion into GaAs and AlxGa1−xAs (0.1≤x≤0.5) at 700 °C, are compared with the traditional closed tube diffusion process. It is seen that the new process provides for a very well controlled diffusion depth and allows shallow diffusion. The specific resistivity and surface carrier concentration are measured by the Van der Pauw method. The diffusion quality is affected by the choice of solvent metals. Some variations of solvent metals are discussed. This technique is used for improvement of ohmic contacts in monolithic integrated-optical devices.

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