A 2000 V non-punchthrough IGBT with high ruggedness
- 31 May 1992
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 35 (5) , 681-685
- https://doi.org/10.1016/0038-1101(92)90037-d
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Mobility of Holes and Electrons in High Electric FieldsPhysical Review B, 1953