AlGaN/GaN HFETs on 100 mm Silicon Substrates for Commercial Wireless Applications
Open Access
- 19 December 2002
- journal article
- research article
- Published by Wiley in physica status solidi (c)
- No. 1,p. 52-56
- https://doi.org/10.1002/pssc.200390106
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- An insulator-lined silicon substrate-via technology with high aspect ratioIEEE Transactions on Electron Devices, 2001
- Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in ThicknessJapanese Journal of Applied Physics, 2000