High electrical resistivity diamond films deposited from an oxyacetylene flame

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Abstract
Diamond films with electrical resistivity as high as 1014 Ω cm have been deposited on silicon, molybdenum, and other foreign substrates from an oxyacetylene flame. Exposure of the highly resistive diamond films to a hydrogen plasma leads to the decrease of the electrical resistivity by several orders of magnitude. Low level incorporation of atomic hydrogen in the oxyacetylene flame into the diamond film under the flame deposition conditions is believed to be the cause of the high electrical resistivity of the flame‐grown diamond films. In contrast to the relatively low resistivity of diamond films deposited in a hydrogen/methane plasma, flame deposition provides a means of growing electrically insulating diamond thin films.