Properties of molybdenum films prepared by decomposition of the carbonyl

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Abstract
Results of research directed toward preparation of refractory metal electrodes for amorphous chalcogenide semiconductors are presented. Mo(CO)6 vapor in Ar carrier gas was pyrolytically decomposed at temperatures below 250 °C to form a low-resistance metallic coating on selected substrates. X-ray and electron diffraction experiments indicated these films are amorphous. Heat treatment for 15 min at 865 °C promoted crystallization of the deposits; x-ray analysis then showed the presence of Mo and Mo2C in a 2:1 ratio. Masking techniques to produce particular electrode configurations were only partially successful; however, a photolithographic method produced electrodes completely satisfactory for electrical-properties measurements.

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