Current-voltage characteristics of thin film and bulk diamond treated in hydrogen plasma
- 1 April 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (4) , 159-161
- https://doi.org/10.1109/55.61780
Abstract
It is shown that the electrical properties of thin film and bulk diamond can be systematically altered by hydrogen plasma treatment under controlled conditions. The concentration of electrically active hydrogen introduced in diamond can be determined from the current-voltage characteristics of hydrogenated samples containing traps. Hydrogen passivation of deep traps in diamond is clearly demonstrated.Keywords
This publication has 14 references indexed in Scilit:
- Hydrogen passivation of defects and impurities in GaAs and InPJournal of Electronic Materials, 1989
- Passivation of defects in polycrystalline superlattices and quantum well structuresApplied Physics Letters, 1989
- Hydrogen passivation of electrically active defects in diamondApplied Physics Letters, 1989
- Optimum semiconductors for high-power electronicsIEEE Transactions on Electron Devices, 1989
- Diamond films for laser hardeningApplied Physics Letters, 1989
- Laser Damage Threshold Of Diamond FilmsOptical Engineering, 1989
- Picosecond optoelectronic switching in insulating diamondIEEE Journal of Quantum Electronics, 1986
- Visible color-center laser in diamondOptics Letters, 1985
- The electrical properties of deep copper- and nickel-related centers in siliconJournal of Applied Physics, 1983
- Hydrogen passivation of copper-related defects in germaniumApplied Physics Letters, 1982