Optically High Transparent SiN Mask Membrane with Low Stress Deposited by Low Pressure Chemical Vapor Deposition
- 1 December 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (12S) , 4195-4199
- https://doi.org/10.1143/jjap.31.4195
Abstract
Optically high transparent and low-stress silicon nitride film for X-ray mask membrane was successfully deposited by low pressure chemical vapor deposition (LPCVD). Deposition of silicon nitride films in a relatively higher temperature range of 900°C-1000°C was investigated as a function of deposition temperature and reactant gas flow (SiH2Cl2 and NH3). Silicon nitride films of low tensile stress in the order of 3-5×108 dyn/cm2 with low refractive index of 2.05 were obtained at 1000°C. Silicon nitride membrane deposited at 1000°C showed optical transparency ∼95% (λ=633 nm). Use of such optically high transparent silicon nitride film will be helpful in reducing the alignment signal detection error, which is required for highly efficient mask wafer alignment.Keywords
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