Time-DomainAb InitioSimulation of Electron and Hole Relaxation Dynamics in a Single-Wall Semiconducting Carbon Nanotube
- 11 May 2006
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 96 (18) , 187401
- https://doi.org/10.1103/physrevlett.96.187401
Abstract
The electron and hole relaxation in the zigzag carbon nanotube is simulated in time domain using a surface-hopping Kohn-Sham density functional theory. Following a photoexcitation between the second van Hove singularities, the electrons and holes decay to the Fermi level on characteristic subpicosecond time scales. Surprisingly, despite a lower density of states, the electrons relax faster than the holes. The relaxation is primarily mediated by the high-frequency longitudinal optical (LO) phonons. Hole dynamics are more complex than the electron dynamics: in addition to the LO phonons, holes couple to lower frequency breathing modes and decay over multiple time scales.
Keywords
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