On the infrared luminescence of GaAs1-xPx
- 16 August 1973
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 18 (2) , K139-K141
- https://doi.org/10.1002/pssa.2210180258
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- On the determination of the carrier concentration of GaAs1−xPxPhysica Status Solidi (a), 1973
- Stoichiometric effects in the growth of doped epitaxial layers of GaAs1-χPχJournal of Crystal Growth, 1971
- Optical Properties of n-Type GaAs. III. Relative Band-Edge Recombination Efficiency of Si- and Te-Doped Crystals before and after Heat TreatmentJournal of Applied Physics, 1969
- Evidence for Self-Activated Luminescence in GaAs: The Gallium Vacancy-Donor CenterPhysical Review B, 1968