Surface quantum oscillations in (110) and (111) n-type silicon inversion layers
- 1 August 1975
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 17 (3) , 295-300
- https://doi.org/10.1016/0038-1098(75)90297-5
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Quantum oscillations in p-type inversion layers of (111) and (100) silicon field effect transistorsSolid State Communications, 1974
- Shubnikov-de Haas oscillations in p-type inversion layers on n-type siliconSolid State Communications, 1974
- Piezoresistance in n-type silicon inversion layers at low temperaturesPhysica Status Solidi (a), 1973
- Effects of a Tilted Magnetic Field on a Two-Dimensional Electron GasPhysical Review B, 1968
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967