Characterization and modeling of amplified spontaneous emission in unsaturated erbium-doped fiber amplifiers
- 1 February 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 3 (2) , 127-129
- https://doi.org/10.1109/68.76863
Abstract
The generation of amplified spontaneous emission (ASE) in erbium-doped fiber amplifiers (EDFAs) is characterized. A theoretical model, leading to closed-form analytical expressions for the backward and forward ASE power spectra, is developed for the unsaturated gain regime. This study shows that for the unsaturated gain regime, both power and spectral distributions of the ASE can be well described through the closed-form expressions, which require only measurable experimental parameters.Keywords
This publication has 7 references indexed in Scilit:
- Modeling of gain in erbium-doped fiber amplifiersIEEE Photonics Technology Letters, 1990
- Gain in erbium-doped fiber amplifiers: a simple analytical solution for the rate equationsOptics Letters, 1990
- Analysis of erbium-doped fiber amplifiers pumped in the /sup 4/I/sub 15/2/-/sup 4/I/sub 13/2/ bandIEEE Photonics Technology Letters, 1989
- Amplification of spontaneous emission in erbium-doped single-mode fibersJournal of Lightwave Technology, 1989
- High-gain erbium-doped traveling-wave fiber amplifierOptics Letters, 1987
- Low-noise erbium-doped fibre amplifier operating at 1.54μmElectronics Letters, 1987
- Measurement of the cross section for stimulated emission in neodymium-doped glass from the output of a free-running laser oscillatorJournal of Physics D: Applied Physics, 1968