Observation of near-interface oxide traps with the charge-pumping technique
- 1 December 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (12) , 627-629
- https://doi.org/10.1109/55.192866
Abstract
In studies of MOS devices with the charge pumping technique, the authors have encountered a low-frequency increase in the charge recombined per cycle, which they attribute to the charging and discharging of traps located within a tunneling distance of the Si-SiO/sub 2/ interface, i.e., near-interface oxide traps. MOS devices subjected to ionizing radiation as well as ultrathin tunnel oxide polysilicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory devices possess a high density of near-interface oxide traps. When the charge recombined per cycle is examined as a function of frequency, a breakpoint is observed at a particular frequency with an inverse equivalent to a trap-to-trap tunneling time constant.Keywords
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