Numerical simulation of GaAs MESFET's on the semi-insulting substrate compensated by deep traps
- 1 November 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (11) , 1778-1785
- https://doi.org/10.1109/16.7387
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
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